作者: Y. Sakuraba , T. Iwase , K. Saito , S. Mitani , K. Takanashi
DOI: 10.1063/1.3068492
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摘要: Co2MnSi/Cr/Co2MnSi (001)-fully epitaxial current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices were fabricated via an UHV magnetron sputtering system. The relationship between the degree of chemical ordering in Co2MnSi (CMS) and CPP-GMR characteristics was investigated systematically against annealing temperature devices. X-ray diffraction profiles reflection high-energy electron images indicated that improved L21-ordering. MR ratio also increased upon maximum 5.2% ΔRA 6.5 mΩ μm2 achieved by at 400 °C. These results indicate promoting L21-ordering CMS enhances bulk and/or interface spin-asymmetry coefficients.