Three-dimensional integrated circuit and manufacturing method therefor
作者： Masao Fujitsu Ltd. Pat.Dep. Taguchi , Takashi Fujitsu Ltd. Pat.Dep. Kato
DOI:
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摘要: The present invention is directed to a three-dimensional stacked IC and method for forming on base plate. includes unit semiconductor IC, which has constituent ICs formed either one surface or both surfaces of substrate. In addition, the have plurality conducting posts buried in penetrating through substrate insulated therefrom. interconnection terminals provided sides connecting other By stacking plural plate, very large scale can be fabricated. Each bulk silicon substrate, therefore excellent quality obtained. This also applied fabrication ROM structure such as PROM MASK ROM, using single ICs, wherein wiring second
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