Method for fabricating a semiconductor contact and interconnect structure using orientation dependent etching and thermomigration

摘要: A method for fabricating a semiconductor device and the so fabricated, wherein includes steps of forming mesa upon one side surface then conduction path from extending through slice to opposite substrate. Aluminum/silicon alloy droplets are deposited on first form liquid eutectic which extends by providing thermal gradient across causing thermomigration eutectic. An electrical circuit is formed electrically connected metal conductor substrate as structure also described that an elevated indentation in other side, combination two or more such substrates arranged stacked configuration. The has conductive layer thereon material At least element located said