Method for forming thin film using radicals generated by plasma

作者: Sang In Lee

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摘要: A method for forming a thin film using radicals generated by plasma may include generating of reactant precursor plasma; first on substrate exposing the to mixture and source precursor; second precursor. Since is exposed between formation film, rate deposition be improved.

参考文章(165)
Charles Dominic Iacovangelo, James Neil Johnson, William Arthur Morrison, Kenneth Walter Browall, Steven Marc Gasworth, Barry Lee-Mean Yang, Apparatus and method for large area chemical vapor deposition using multiple expanding thermal plasma generators ,(2002)
Martin Zucker, Neil Mackie, Steven Selbrede, Effluent pressure control for use in a processing system ,(2004)
John R. Abelson, Navneet Kumar, Gregory S. Girolami, Angel Yanguas-Gil, Surface preparation for thin film growth by enhanced nucleation ,(2009)
Nicholas M. Gralenski, Adam Q. Miller, Jay B. Dedontney, Single body injector and method for delivering gases to a surface ,(1995)
Daniel M. Dobkin, Adam Q. Miller, Single body injector and deposition chamber ,(1998)
Yoshihide Senzaki, Seung Gyun Park, System and method for forming multi-component dielectric films ,(2004)
Eric J. Shero, Chang-gong Wang, Petri I. Raisanen, Sung-Hoon Jung, Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species ,(2011)