Method of producing semiconductor device

作者: Hiroshi Komatsu

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摘要: A method of producing a semiconductor device able to prevent outward diffusion an impurity from gate electrode and improve the quality, comprising steps forming made layer on substrate (preferably SOI substrate) via insulating film, first film coating by ALD, second introducing silicon active wafer) form source/drain region self-alignment with respect electrode, interlayer film.

参考文章(3)
Coming Chen, Sun-Jay Chang, Method for producing PMOS devices ,(1999)
Beom-jun Jin, Young-pil Kim, Byeong-Yun Nam, Semiconductor device having transistor ,(2001)