Method for encapsulating a high-K gate stack by forming a liner at two different process temperatures

摘要: Encapsulation of a gate stack comprising high-k dielectric material may be accomplished on the basis silicon nitride that is deposited in sequence two deposition processes, which first process performed moderately low temperature, thereby passivating sensitive surfaces without unduly contaminating same, while, second process, high temperature used to provide enhanced characteristics and reduced overall cycle time compared conventional ALD or multi-layer techniques.