Protection of high-k dielectric during reliability anneal on nanosheet structures
作者： Muthumanickam Sankarapandian , Vijay Narayanan , Sanjay C. Mehta , Nicolas J. Loubet
DOI:
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摘要: A starting structure for forming a gate-all-around field effect transistor (FET) and method of fabricating the FET. The includes stack silicon nanosheets above substrateforming an interfacial layer over depositing high-k dielectric conformally on layer. also nitride (SiN) performing reliability anneal after SiN to crystallize
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