Methods of depositing two or more layers on a substrate in situ
作者： Jan Willem Maes
DOI:
关键词: Layer (electronics) 、 Silicon nitride 、 Remote plasma 、 Chemical vapor deposition 、 Materials science 、 Substrate (electronics) 、 Chemical engineering 、 Dielectric 、 Atomic layer deposition 、 Oxide 、 Environmental chemistry
摘要: The present invention provides methods of depositing two or more layers on a substrate in situ. In particular, are provided for forming high-k dielectric gate stack substrate. Preferably, oxide, such as HfO 2 , HfSiO 4 ZrO ZrSiO deposited reaction chamber by an atomic layer deposition (ALD) process. A silicon nitride is the chemical vapor (CVD) process, preferably remote plasma enhanced (RPECVD) ALD process and RPECVD carried out under substantially isothermal conditions same reactor.
lens.org 参考文章(43)
Mark Visokay, Antonio Luis Pacheco Rotondaro, Luigi Colombo, James Joseph Chambers, Methods for sputter deposition of high-k dielectric films ,(2003)
Larry D. Hartsough, Apparatus and process for sputter deposition of reacted thin films ,(1983)
Shigeki Matsuo, Liquid crystal display device and its fabricating method ,(1995)
Robert W. Fiordalice, Hisao Kawasaki, Johnson O. Olowolafe, Method for forming a conductive interconnect in an integrated circuit ,(1994)
Wiebe B. deBoer, Klavs F. Jensen, Gary W. Read, Wayne L. Johnson, McDonald Robinson, Apparatus for chemical vapor deposition using an axially symmetric gas flow ,(1988)
Shinji Shimada, Liquid crystal display device with large aperture ratio ,(1998)
Edward Bok, Method for applying a coating on a substrate ,(1983)
Lynn R. Skow, Arthur R. Moore, William M. Dunbar, Flexible system for handling articles ,(1993)
Carter W. Kaanta, Stuart R. Martin, Matthew J. Rutten, Terry J. Brabazon, Badih El-Kareh, Precision analog metal-metal capacitor ,(1995)
Margreet Albertine Anne-Marie Van Wijck, Method for vapour deposition of a film onto a substrate ,(2001)