Optimal design of SiC MOSFETs for 20kW DCDC converter
作者： Weicheng Zhou , Shu Yang , Xinke Wu , Kuang Sheng
DOI: 10.23919/ISPSD.2017.7988969
关键词:
摘要: SWicoii Carbide (SiC) MOSFET, enabling high frequency, temperature and power density, are attractive for electronics applications. However, due to the limited area of a single chip, paralleling SiC MOSFETs is necessary approach increase capacity module. In this work, targeted at 20kW DC/DC converter HEV application, we have designed fabricated 1200V/100A modules using different numbers 1200V/80mΩ MOSFET chips. The influence chip number on switching loss efficiency been analyzed module optimization. Furthermore, operating frequency basing Si IGBT compared investigated.
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