Unconventional Correlation between Quantum Hall Transport Quantization and Bulk State Filling in Gated Graphene Devices.
作者： Yong-Tao Cui , Bo Wen , Eric Y. Ma , Georgi Diankov , Zheng Han
DOI: 10.1103/PHYSREVLETT.117.186601
关键词:
摘要: We report simultaneous transport and scanning microwave impedance microscopy to examine the correlation between quantization filling of bulk Landau levels in quantum Hall regime gated graphene devices. Surprisingly, a comparison these measurements reveals that quantized typically occurs below complete levels, when is still conductive. This result points revised understanding carriers are accumulated by gating. discuss implications on study effect related topological states other two-dimensional electron systems.
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