Calibration of Minority Carrier Lifetimes Measured with an ac Photovoltaic Method

摘要: Calibration curves for estimating true lifetimes from the measured ones are theoretically obtained getting long of relatively thin Si wafers, where with an ac photovoltaic method limited by sample thickness. Apparent 7.2 through 14 µs in 475 µm thick p-type wafers calibrated to be 9.6 65µs, respectively, using calibration curves. As a result, it is found that samples oxidized after dipping HF solution longer than those without solution. This because contaminated natural oxide films on sample, which formed alkaline rinse, eliminated dipping.