Dependence of effective carrier lifetime in iron-doped silicon crystals on the carrier injection level

摘要: The effective carrier lifetimes of oxidized silicon crystals have been studied using a microwave photoconductive decay method. the p-type samples, which had surface inversion layers, increased when injected concentrations were reduced, then converged towards same saturated value although samples different bulk lifetimes. convergent was found to be determined by interface trap density. n-type accumulation did not change with concentration. This study shows that very low injection conditions give rise risk wrong conclusions, depending on conditions, method is used determine if lifetime degradation has caused contamination.