Method for making integrated circuit contact structure

摘要: An electrical interconnection contact structure including a layer containing major proportion of an intermetallic compound contacting the surface integrated circuit device. The is covered by conductive alloy which includes solid solution same chemical elements as compound. One preferred to be electromigration preventing dopant. Two methods creating such are disclosed sandwich technique where first element and second form co-deposition co-deposited alternative embodiment causing spheroidize after exposure high temperature stress allowing ingredient overlying semiconductor between spheroids. invention provides effective method controlling spiking shallow junctions while improving characteristics member.