A nonvolatile ferroelectric RAM with common plate folded bit-line cell and enhanced data sensing scheme
作者： Byung-Gil Jeon , Mun-Kyu Choi , Yoonjong Song , Kinam Kim
DOI: 10.1109/ISSCC.2001.912423
关键词:
摘要: … by enabling the sense amplifier after disabling word line [3]. … a bit-line reference capacitor as reference bit-line loading … 1a, and the SPL_PR signal in SWPD_O discharges the SPL …
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iczhiku.com 参考文章(6)
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