Demonstration of a 4 Mb, high density ferroelectric memory embedded within a 130 nm, 5 LM Cu/FSG logic process
作者： T.S. Moise , S.R. Summerfelt , H. McAdams , S. Aggarwal , K.R. Udayakumar
DOI: 10.1109/IEDM.2002.1175897
关键词:
摘要: … drawn) transistors and W plug contacts. Starting at the planar contact level, we employ sputter deposition … A 2ps pulse width and 200 Ohm series resistor was used far this measurement. …
sci-hub.se 参考文章(5)
SR Summerfelt, TS Moise, G Xing, L Colombo, T Sakoda, SR Gilbert, ALS Loke, S Ma, LA Wills, R Kavari, T Hsu, J Amano, ST Johnson, DJ Vestcyk, MW Russell, SM Bilodeau, P Van Buskirk, None, Demonstration of scaled (⩾0.12 μm2) Pb(Zr,Ti)O3 capacitors on W plugs with Al interconnect Applied Physics Letters. ,vol. 79, pp. 4004- 4006 ,(2001) , 10.1063/1.1423789
Jürgen T. Rickes, Scott R. Summerfelt, Ralph H. Lanham, Rainer M. Waser, Circuit design issues affecting present and future deep sub-micron ferroelectric random-access memories Integrated Ferroelectrics. ,vol. 40, pp. 65- 82 ,(2001) , 10.1080/10584580108010830
H. Takasu, Integrated ferroelectrics as a strategic device Integrated Ferroelectrics. ,vol. 14, pp. 1- 10 ,(1997) , 10.1080/10584589708019971
H.H. Kim, Y.J. Song, S.Y. Lee, H.J. Joo, N.W. Jang, D.J. Jung, Y.S. Park, S.O. Park, K.M. Lee, S.H. Joo, S.W. Lee, S.D. Nam, K. Kim, Novel integration technologies for highly manufacturable 32 Mb FRAM symposium on vlsi technology. pp. 210- 211 ,(2002) , 10.1109/VLSIT.2002.1015456
Byung-Gil Jeon, Mun-Kyu Choi, Yoonjong Song, Kinam Kim, A nonvolatile ferroelectric RAM with common plate folded bit-line cell and enhanced data sensing scheme international solid-state circuits conference. ,vol. 44, pp. 38- 39 ,(2001) , 10.1109/ISSCC.2001.912423