Reliability of Ferroelectric Random Access memory embedded within 130nm CMOS
作者： J. Rodriguez , K. Remack , J. Gertas , L. Wang , C. Zhou
DOI: 10.1109/IRPS.2010.5488738
关键词:
摘要: We present results of a comprehensive reliability evaluation 2T–2C, 4Mb, Ferroelectric Random Access Memory embedded within standard 130nm, 5LM Cu CMOS platform. Wear-out free endurance to 5.4×1013 cycles and data retention equivalent 10 years at 85°C is demonstrated. The show that the technology can be used in wide range applications including processing.
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