Impurity-related intraband absorption in coupled quantum dot-ring structure under lateral electric field

摘要: Abstract The effects of a lateral electric field on intraband absorption in GaAs/GaAlAs two-dimensional coupled quantum dot-ring structure with an on-center hydrogenic donor impurity are investigated. confining potential the system consists two parabolas various confinement energies. calculations made using exact diagonalization technique. A selection rule for transitions was found x-polarized incident light. spectrum mainly exhibits redshift increment strength. On other hand, can exhibit either blue- or depending values energies dot and ring. Additionally, changes energetic shift direction influenced by variation barrier thickness structure.