Performance improvements of ofets through use of field oxide to control ink flow

摘要: An OFET includes a thick dielectric layer with openings in the active region of transistor. After field is formed, semiconductor ink dropped cavities layer, forming layer. The bounded by walls. annealed, into same cavities. As ink, wall confines flow ink. confined causes to pool cavity, uniform within and thereby decreasing probability pinhole shorting. gate covers completing high performance structure.