Radiative Recombination from Photoexcited Hot Carriers in GaAs
作者： Jagdeep Shah , R. C. C. Leite
DOI: 10.1103/PHYSREVLETT.22.1304
关键词:
摘要:
harvard.edu
sci-hub.se 参考文章(6)
M. D. Sturge, Optical Absorption of Gallium Arsenide Between 0.6 and 2.75 eV Physical Review. ,vol. 127, pp. 768- 773 ,(1962) , 10.1103/PHYSREV.127.768
Aram Mooradian, H. Y. Fan, Recombination Emission in InSb Physical Review. ,vol. 148, pp. 873- 885 ,(1966) , 10.1103/PHYSREV.148.873
M. G. Holland, Phonon Scattering in Semiconductors From Thermal Conductivity Studies Physical Review. ,vol. 134, pp. 471- 480 ,(1964) , 10.1103/PHYSREV.134.A471
H. Ehrenreich, Band Structure and Electron Transport of GaAs Physical Review. ,vol. 120, pp. 1951- 1963 ,(1960) , 10.1103/PHYSREV.120.1951
Eijiro Haga, Hatsuo Kimura, Free-Carrier Infrared Absorption in III-V Semiconductors III. GaAs, InP, GaP and GaSb Journal of the Physical Society of Japan. ,vol. 19, pp. 658- 669 ,(1964) , 10.1143/JPSJ.19.658
The influence of interelectronic collisions on conduction and breakdown in polar crystals Proceedings of The Royal Society A: Mathematical, Physical and Engineering Sciences. ,vol. 246, pp. 406- 422 ,(1958) , 10.1098/RSPA.1958.0147