Luminescence of GaAs/A1 GaAs MQW Structures under Picosecond and Nanosecond Excitation
作者： L. Angeloni , A. Chiari , M. Collocci , F. Fermi , M. Gurioli
DOI: 10.1007/978-1-4684-7278-3_21
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摘要: The optical and transport properties of the quasi-two-dimensional electronic system in quantum well structures (QWS) have been extensively investigated last years not only because their importance basic semiconductor physics but also for possible application as optoelectronic devices.
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