GaAs-δ layered within nitrogen for high efficiency photovoltaic devices: First principle prediction

作者: Nassima Madini , Khadidja Rahmoun , Michel Cote

DOI: 10.1109/NAWDMPV.2014.6997622

关键词:

摘要: … The electronic structure profile is well reproduced and the band gap is direct since the lowest unoccupied crystal orbital and the highest occupied crystal orbital is at the zone center Γ. …

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