On limitingly high temperature measurable by diode sensor

摘要: The criterion limiting from above a range of temperatures measurable by means diode sensor has been found. It is an equality voltage drop U across p-n junction to thermal kT/q. Use this allowed express value maximal temperature T* through physical and design parameters excitation current. shown that variation giving rise extension the accompanied reducing its sensitivity. As example validity determined theoretically relation between silicon experimentally verified.