作者: B. Druz , I. Zaritskiy , Y. Yevtukhov , A. Konchits , M. Valakh
DOI: 10.1557/PROC-593-249
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摘要: Tetrahedral diamond like carbon (ta-C) films were deposited onto Si substrates using Filtered Cathodic Vacuum Arc (FCVA) process. Stress of was varied in the range 3.5÷8.5 GPa. The ESR (stationary and pulse) Raman techniques used to analyze sp2 related defects pseudo-gap undoped, as 20 – 100 nm thick films. results are compared with data for direct ion beam from CH4 plasma hydrogenated DLHC nature paramagnetic DLC is discussed.