Progress in the developments of (Ba,Sr)TiO3 (BST) thin films for Gigabit era DRAMs
作者： S Ezhilvalavan , Tseung-Yuen Tseng
DOI: 10.1016/S0254-0584(00)00253-4
关键词:
摘要: … The trends of DRAM capacitors in the last decade are briefly … Pt-storage node electrode is one of the good examples for … on DRAMs are dielectric constant, leakage current density and …
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M. S. Tsai, T. Y. Tseng, Conduction mechanism and temperature-dependent current-voltage in (Ba, Sr)TiO3 thin films Journal of The Electrochemical Society. ,vol. 145, pp. 2853- 2860 ,(1998) , 10.1149/1.1838725
K.P. Lee, Y.S. Park, D.H. Ko, C.S. Hwang, C.J. Kang, K.Y. Lee, J.S. Kim, J.K. Park, B.H. Roh, J.Y. Lee, B.C. Kim, J.H. Lee, K.N. Kim, J.W. Park, R.J.G. Lee, A process technology for 1 giga-bit DRAM Proceedings of International Electron Devices Meeting. pp. 907- 910 ,(1995) , 10.1109/IEDM.1995.499363
Tae-Gyoung In, Sunggi Baik, Sangsub Kim, Leakage current of Al- or Nb-doped Ba 0.5 Sr 0.5 TiO 3 thin films by rf magnetron sputtering Journal of Materials Research. ,vol. 13, pp. 990- 994 ,(1998) , 10.1557/JMR.1998.0139
A. Grill, W. Kane, J. Viggiano, M. Brady, R. Laibowitz, Base electrodes for high dielectric constant oxide materials in silicon technology Journal of Materials Research. ,vol. 7, pp. 3260- 3265 ,(1992) , 10.1557/JMR.1992.3260
S. Hayashi, M. Huffman, M. Azuma, Y. Shimada, T. Otsuki, G. Kano, L.D. McMillan, C.A. Paz de Araujo, Gigabit-scale DRAM capacitor technology with high dielectric constant thin films by a novel conformal deposition technique Proceedings of 1994 VLSI Technology Symposium. pp. 153- 154 ,(1994) , 10.1109/VLSIT.1994.324411
Masaji Yoshida, Hiromu Yamaguchi, Toshiyuki Sakuma, Yoichi Miyasaka, Pierre‐Yves Lesaicherre, Akihiko Ishitani, Chemical Vapor Deposition of ( Ba , Sr ) TiO3 Journal of The Electrochemical Society. ,vol. 142, pp. 244- 248 ,(1995) , 10.1149/1.2043883
A.I. Kingon, S.K. Streiffer, C. Basceri, S.R. Summerfelt, High-Permittivity Perovskite Thin Films for Dynamic Random-Access Memories Mrs Bulletin. ,vol. 21, pp. 46- 52 ,(1996) , 10.1557/S0883769400035910
Won‐Jae Lee, Ho‐Gi Kim, Soon‐Gil Yoon, None, Microstructure dependence of electrical properties of (Ba0.5Sr0.5)TiO3 thin films deposited on Pt/SiO2/Si Journal of Applied Physics. ,vol. 80, pp. 5891- 5894 ,(1996) , 10.1063/1.363583
Moazzami, Maniar, Jones, Campbell, Mogab, Ultra-high charge storage capacity ferroelectric lead zirconate titanate thin films for gigabit-scale DRAM's international electron devices meeting. pp. 973- 975 ,(1992) , 10.1109/IEDM.1992.307519
S. Kamiyama, T. Saeki, H. Mori, Y. Numasawa, Highly reliable 2.5 nm Ta/sub 2/O/sub 5/ capacitor process technology for 256 Mbit DRAMs international electron devices meeting. pp. 827- 830 ,(1991) , 10.1109/IEDM.1991.235297