Electrical and dielectric behavior of MgO doped Ba 0.7Sr0.3TiO 3 thin films on Al2 O3 substrate
作者： S. Y. Lee , T. Y. Tseng
DOI: 10.1063/1.1458067
关键词:
摘要: In this letter, we present the results of fabrication and characterization 5 mol % MgO doped Ba0.7Sr0.3TiO3 (BST) films grown on Pt/TiN/SiO2 coated Al2O3 substrates using rf magnetron sputtering technique. The dielectric electrical properties thin film were found to improve obviously by means doping. leakage current density BST decreased about 1 order magnitude doping, while with doping had a higher constant than that without increased increasing annealing temperature due consistent increase in grain size crystallinity. 750 °C annealed, 100 nm thick indicated high 440 at kHz lattice 3.986 A. improvement was associated reduced oxygen vacancies improved oxygenation presence MgO. exhibited tunability 25% dc resistivity 6×1010 Ω cm an applied electric field 200 kV/cm. time-dependent breakdown studies longer lifetime over 10 yrs operation 0.4 MV/cm which is better undoped film.
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