Dielectric and ferroelectric properties of Ba(Sn0.15Ti0.85)O3 thin films grown by a sol–gel process
作者： Zhai Jiwei , Shen Bo , Yao Xi , Zhang Liangying , None
DOI: 10.1016/J.MATERRESBULL.2004.05.010
关键词:
摘要: Ferroelectric Ba(Sn{sub 0.15}Ti{sub 0.85})O{sub 3} (BTS) thin films were deposited on LaNiO{sub 3}-coated silicon substrates via a sol-gel process. Films showed strong (1 0 0) preferred orientation depending upon annealing temperature and concentration of the precursor solution. The dependence dielectric ferroelectric properties film has been studied. leakage current density at 100 kV/cm was 7 x 10{sup -7} A/cm{sup 2} 5 -5} their capacitor tunability 54 25% an applied field 200 (measurement frequency 1 MHz) for with 0.1 0.4 M spin-on solution, respectively. This work clearly reveals highly promising potential BTS compared BST application in tunable microwave devices.
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