Effect of (La0.5Sr0.5)MnO3 and (La0.5Sr0.5)CoO3 Buffer Layer on the Dielectric Properties of BaTiO3 Thin Films Prepared by a Sol-Gel Process
作者： S. N. Song , J. W. Zhai , X. Yao
DOI: 10.1080/00150190701541820
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摘要: The dielectric properties of BaTiO3 thin films deposited on (La0.5Sr0.5)MnO3 (LSMO) and (La0.5Sr0.5)CoO3 (LSCO), respectively, as buffer layer, were studied. influence layer the phase was examined. Dielectric investigated a function frequency direct current electric field. These results showed that strongly influenced structure films. LSMO buffered Pt/Ti/SiO2/Si substrates have enhanced tunability lower leakage current.
sci-hub.se 参考文章(12)
Zhai Jiwei, Shen Bo, Yao Xi, Zhang Liangying, None, Dielectric and ferroelectric properties of Ba(Sn0.15Ti0.85)O3 thin films grown by a sol–gel process Materials Research Bulletin. ,vol. 39, pp. 1599- 1606 ,(2004) , 10.1016/J.MATERRESBULL.2004.05.010
Wontae Chang, James S. Horwitz, Adriaan C. Carter, Jeffrey M. Pond, Steven W. Kirchoefer, Charles M. Gilmore, Douglas B. Chrisey, The effect of annealing on the microwave properties of Ba0.5Sr0.5TiO3 thin films Applied Physics Letters. ,vol. 74, pp. 1033- 1035 ,(1999) , 10.1063/1.123446
Ki Hyun Yoon, Byoung Duk Lee, Jihoon Park, Effect of orientation on the dielectric and piezoelectric properties of 0.2Pb(Mg1/3Nb2/3)O3–0.8Pb(Zr0.5Ti0.5)O3 thin films Applied Physics Letters. ,vol. 79, pp. 1018- 1020 ,(2001) , 10.1063/1.1394947
Jaemo Im, O. Auciello, P. K. Baumann, S. K. Streiffer, D. Y. Kaufman, A. R. Krauss, Composition-control of magnetron-sputter-deposited (BaxSr1−x)Ti1+yO3+z thin films for voltage tunable devices Applied Physics Letters. ,vol. 76, pp. 625- 627 ,(2000) , 10.1063/1.125839
S. Maruno, T. Kuroiwa, N. Mikami, K. Sato, S. Ohmura, M. Kaida, T. Yasue, T. Koshikawa, Model of leakage characteristics of (Ba, Sr)TiO3 thin films Applied Physics Letters. ,vol. 73, pp. 954- 956 ,(1998) , 10.1063/1.122050
Jeong Hwan Park, Dong Heon Kang, Ki Hyun Yoon, Effects of Heating Profiles on the Orientation and Dielectric Properties of 0.5Pb(Mg1/3Nb2/3)O3-0.5PbTiO3 Thin Films by Chemical Solution Deposition Journal of the American Ceramic Society. ,vol. 82, pp. 2116- 2120 ,(2004) , 10.1111/J.1151-2916.1999.TB02050.X
B. Nagaraj, T. Sawhney, S. Perusse, S. Aggarwal, R. Ramesh, V. S. Kaushik, S. Zafar, R. E. Jones, J.-H. Lee, V. Balu, J. Lee, (Ba,Sr)TiO3 thin films with conducting perovskite electrodes for dynamic random access memory applications Applied Physics Letters. ,vol. 74, pp. 3194- 3196 ,(1999) , 10.1063/1.124104
A. A. Sirenko, I. A. Akimov, J. R. Fox, A. M. Clark, Hong-Cheng Li, Weidong Si, X. X. Xi, OBSERVATION OF THE FIRST-ORDER RAMAN SCATTERING IN SRTIO3 THIN FILMS Physical Review Letters. ,vol. 82, pp. 4500- 4503 ,(1999) , 10.1103/PHYSREVLETT.82.4500
C. Zhou, D. M. Newns, Intrinsic dead layer effect and the performance of ferroelectric thin film capacitors Journal of Applied Physics. ,vol. 82, pp. 3081- 3088 ,(1997) , 10.1063/1.366147
F. M. Pontes, E. R. Leite, E. Longo, J. A. Varela, E. B. Araujo, J. A. Eiras, Effects of the postannealing atmosphere on the dielectric properties of (Ba, Sr)TiO3 capacitors: Evidence of an interfacial space charge layer Applied Physics Letters. ,vol. 76, pp. 2433- 2435 ,(2000) , 10.1063/1.126367