Current transport in p‐type CdIn2Te4 Schottky diodes
作者： S. Kianian , S. A. Eshraghi , O. M. Stafsudd , A. L. Gentile
DOI: 10.1063/1.339631
关键词:
摘要: Schottky diodes were fabricated on p‐type CdIn2Te4 using evaporated aluminum dots. The forward and reverse current‐voltage characteristics of these barrier devices studied as a function temperature. An analysis this data allows the determination height, behavior traps, current transport mechanism devices. conduction appears to be multistep tunneling process. is dominated by diffusion height associated with junction revealed I‐V 0.4 eV. conductivity type crystals can changed from n p in manner similar CdTe.
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