Point defects in p-type CdIn2Te4 Bridgman grown crystals
作者： S.H You , K.J Hong , T.S Jeong , C.J Youn , J.S Park
DOI: 10.1016/S0022-0248(03)01363-0
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摘要: Abstract Single crystal of p-CdIn 2 Te 4 was grown in a three-stage vertical electric furnace by using Bridgman method. The quality the has been investigated X-ray diffraction and photoluminescence (PL) measurements. From PL spectra as-grown CdIn various heat-treated crystals, (D 0 , X) emission found to be dominant intensity spectrum :Cd, while (A completely disappeared :Cd. However, :Te like crystal. These results indicated that is associated with V which acted as donor related Cd acceptor, respectively. obviously converted into n-type after annealing atmosphere. origin A ) its TO phonon replicas interaction between donors such or int acceptors . Also, In confirmed not form native defects because it existed stable bonding form.
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