Photo-Irresponsive Thin-Film Transistor with MgxZn1-xO Channel

摘要: If field-effect devices based on wide-band-gap semiconductors are ever to find wide application in real transparent electronics, their performance is required remain stable under visible light. In particular, a thin-film transistor (TFT) irresponsive illumination has practical advantage, if used for the switching of pixels liquid crystal display (LCD), because shadeless make it possible lower cost and power consumption. this letter, we report such TFT with channel made low-temperature-grown MgxZn1-xO film. This device polycrystalline Mg0.1Zn0.9O operated shows same transfer characteristics as those dark when wavelength longer than 400 nm. The mobility was measured be 0.8 cm2V-1s-1, comparable that amorphous Si-based TFTs commercial LCDs.