作者: Chu-Te Chi , I-Chun Cheng , Jian-Zhang Chen
DOI: 10.1016/J.JALLCOM.2012.08.004
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摘要: Abstract Transparent p–n heterojunctions composed of p-type CuAlOx:Ca and n-type MgZnO thin films are fabricated on indium tin oxide (ITO) coated polyethylene terephthalate (PET) using RF magnetron sputtering at room temperature without additional heat-treatment. The rectifying characteristics the diodes observed through current density–voltage (J–V) curves. vary with Mg content in MgZnO. absolute values turn-on voltage breakdown increase content. diode properties can be designed by adjusting layers. UV responses evaluated measuring J–V under irradiation a wavelength 365 nm. absorption decreases an diodes. results show that these transparent used as detectors plastics.