作者: Rama Venkatasubramanian , Thomas Colpitts , Brooks O’Quinn , Sandra Liu , Nadia El-Masry
DOI: 10.1063/1.124610
关键词:
摘要: We describe a simple, yet phenomenologically very different, low-temperature modification to the conventional metal–organic chemical vapor deposition. It has been applied epitaxy of hexagonal-phased Bi2Te3/Sb2Te3 superlattices on zinc-blende GaAs substrates. The enables two-dimensional, layer-by-layer, instead three-dimensional islanded growth. Therefore, this approach is generic importance many electronic and magnetic materials their superlattices. High-resolution transmission electron microscopy studies indicate that interface between substrate Bi2Te3 film qualitatively defect free periodic structures are formed in superlattices, with one individual layers as small 10 A. Such ultra-short-period offer significantly higher carrier mobilities than respective solid-solution alloys, apparently due elimination alloy scattering minimal effects random inte...