In2O3 deposited by reactive evaporation of indium in oxygen atmosphere — influence of post-annealing treatment on optical and electrical properties

摘要: Abstract Transparent and conductive indium oxide films have been obtained by reactive evaporation of in partial oxygen pressure. The pressure, the substrate temperature deposition rate used as variable parameters. Post-deposition annealing treatment air or argon ambient also used. During process, different mechanisms with opposite effects are competition. Thus, vacancy density which is proportional to carrier decreases when pressure increases, while crystalline quality improve. Therefore, an experimental domain can be defined where more less similar properties: a transmittance higher than 90% conductivity 10+3– 3×10 +3 ( Ω cm ) −1 . In environment, optimal conditions summarised follows — P 0 :8×10 −2 Pa ; T s :200 ° C In2O3 V d :0.05 nm