Structure and chemical composition of BN thin films grown by pulsed-laser deposition (PLD)

摘要: Abstract BN thin films are grown on Si(100) substrates in a pulsed-laser deposition (PLD) process using pulsed CO 2 laser, hexagonal-phase (h-BN) target, and N as processing gas. The effect of RF power coupled to the substrate during PLD is investigated. Films analysed optical microscopy micro-Raman X-ray photoemission spectroscopies. They generally composed fine-grained matrix which particles 10–100 μ m size embedded, with morphology chemical composition dependent lateral position film surface relative laser-induced plasma plume from target. roughness contaminant concentration (B O 3 , elemental B, boron-oxynitride) largest nearest plasma-affected region. material over entire exhibits weak, broad spectral structures, indicating an amorphous structure. Certain regions have addition h-BN Raman peaks that shifted by up 15 cm −1 lower wave numbers crystalline due strain built deposition. No characteristic cubic or B found. Positions further region show stronger peaks, implying more order. highest degree crystallinity reached for applied mainly laser pulses, opposed between pulses without power. In general, embedded intense than surrounding matrix, comparable strength those suggesting they arise ejection.