作者: A. Mycielski , A.J. Szadkowski , L. Kowalczyk , M. Zieli?ski , E. ?usakowska
DOI: 10.1002/1521-3951(200201)229:1<189::AID-PSSB189>3.0.CO;2-0
关键词:
摘要: Detrimental role of traces oxygen in the growth process ZnSe-based wide-gap II-VI semiconductor crystals is emphasized. Adhesion, enhanced by presence oxygen, growing crystal to walls quartz ampoule promotes generation twinning and dislocations. The technology substrate-quality crystals, which ensures nearly complete removal described. results characterization obtained large (25 mm diameter), twin-free single ZnSe, substrate plates are presented.