Zinc selenide and zinc telluride

M. Godlewski, M. Surma, Efficient Two-Center Auger Mechanism of Electron Trapping by Fe^{3+} Ions in ZnSe:Fe,Cr Acta Physica Polonica A. ,vol. 92, pp. 1017- 1020 ,(1997) , 10.12693/APHYSPOLA.92.1017

M. Surma, M. Godlewski, T. P. Surkova, Iron and chromium impurities in ZnSe as centers of nonradiative recombination Physical Review B. ,vol. 50, pp. 8319- 8324 ,(1994) , 10.1103/PHYSREVB.50.8319

Nobuyuki Yoshikawa, Hiroshi Ishibashi, Masanori Sugahara, Dynamic characteristics of inverter circuits using single electron transistors Japanese Journal of Applied Physics. ,vol. 34, pp. 1332- 1338 ,(1995) , 10.1143/JJAP.34.1332

M. Godlewski, E. Guziewicz, K. Kopalko, E. Łusakowska, E. Dynowska, M.M. Godlewski, E.M. Goldys, M.R. Phillips, Origin of white color light emission in ALE-grown ZnSe Journal of Luminescence. ,vol. 102, pp. 455- 459 ,(2003) , 10.1016/S0022-2313(02)00597-5

Hiroshi Ogawa, Gheyas Syed Irfan, Hitoshi Nakayama, Mitsuhiro Nishio, Akira Yoshida, Growth of Low-Resistivity n-Type ZnTe by Metalorganic Vapor Phase Epitaxy Japanese Journal of Applied Physics. ,vol. 33, ,(1994) , 10.1143/JJAP.33.L980

M Godlewski, E.M Goldys, M.R Phillips, K Pakuła, J.M Baranowski, Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: role of GaN buffer layer Applied Surface Science. ,vol. 177, pp. 22- 31 ,(2001) , 10.1016/S0169-4332(01)00188-X

H. Sugawara, M. Ishikawa, G. Hatakoshi, High‐efficiency InGaAlP/GaAs visible light‐emitting diodes Applied Physics Letters. ,vol. 58, pp. 1010- 1012 ,(1991) , 10.1063/1.104407

M. Godlewski, Photoelectron paramagnetic resonance studies of the nature of donor-acceptor pair-recombination processes in ZnS:Cr,Sc Physical Review B. ,vol. 32, pp. 8162- 8170 ,(1985) , 10.1103/PHYSREVB.32.8162

A. Mycielski, A.J. Szadkowski, L. Kowalczyk, M. Zieli?ski, E. ?usakowska, B. Witkowska, W. Kaliszek, A. J??drzejczak, J. Adamczewska, P. Kaczor, M. Chernyshova, Technology and Characterization of Single‐Crystalline Substrates Made of ZnSe‐Based Wide‐Gap II–VI Semiconductor Compounds Physica Status Solidi B-basic Solid State Physics. ,vol. 229, pp. 189- 192 ,(2002) , 10.1002/1521-3951(200201)229:1<189::AID-PSSB189>3.0.CO;2-0

A. Zakrzewski, M. Godlewski, Isolated iron and chromium as recombination centers in ZnS Journal of Applied Physics. ,vol. 67, pp. 2457- 2461 ,(1990) , 10.1063/1.345494