Effective passivation of defects in Ge-rich SiGe-on-insulator substrates by Al2O3 deposition and subsequent post-annealing

摘要: Abstract A method of Al2O3 deposition and subsequent post-deposition annealing (Al2O3-PDA) was proposed to passivate electrically active defects in Ge-rich SiGe-on-insulator (SGOI) substrates, which were fabricated using Ge condensation by dry oxidation. The effect Al2O3-PDA on defect passivation clarified surface analysis electrical evaluation. It found that could not only suppress the reaction during Al-PDA our previous work [Yang H, Wang D, Nakashima Hirayama K, Kojima S, Ikeura S. Defect control Al-deposition post-annealing for substrates with different fractions. Thin Solid Films 2010; 518: 2342–5.], but also effectively p-type generated condensation. concentration range 1016–1018 cm−3 defect-induced acceptors holes SGOI drastically decreased after Al2O3-PDA. As a result passivation, characteristics both back-gate p-channel n-channel metal–oxide-semiconductor field-effect transistors greatly improved