Method for in-situ dry cleaning, passivation and functionalization of si-ge semiconductor surfaces
作者： Kiarash Kiantaj , Andrew C. Kummel , Tobin Kaufman-Osborn
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摘要: A method for in-situ dry cleaning of a SiGe semiconductor surface doses the with ex-situ wet HF in clean ambient environment or dosing gaseous NH 4 F to remove oxygen containing contaminants. Dosing atomic H removes carbon Low temperature annealing pulls flat. Passivating 2 O vapor sufficient time and concentration forms an monolayer(s) —OH sites on SiGe. Second is conducted at below that which would induce dopant diffusion. surface, degreases Ge organic The then dosed HF(aq) NH4F(g) generated via 3 +NH NF In-situ
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