Atomic imaging of nucleation of trimethylaluminum on clean and H2O functionalized Ge(100) surfaces
作者： Joon Sung Lee , Tobin Kaufman-Osborn , Wilhelm Melitz , Sangyeob Lee , Annelies Delabie
DOI: 10.1063/1.3621672
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摘要: The direct reaction of trimethylaluminum (TMA) on a Ge(100) surface and the effects monolayer H2O pre-dosing were investigated using ultrahigh vacuum techniques, such as scanning tunneling microscopy (STM), spectroscopy (STS), x-ray photoelectron (XPS), density functional theory (DFT). At room temperature (RT), saturation TMA dose produced 0.8 monolayers (ML) semi-ordered species due to dissociative chemisorption TMA. STS confirmed passivated bandgap states dangling bonds. By annealing TMA-dosed Ge surface, STM observed coverage sites decreased 0.4 ML at 250 °C, 0.15 450 °C. XPS analysis showed that only carbon content was reduced during annealing, while Al maintained ML, consistent with desorption methyl (–CH3) groups from adsorbates. Conversely, dosing RT pre-dosed foll...
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