Adsorption and Thermal Reaction of Short-Chain Iodoalkanes on Ge(100)

作者: P. Y. Chuang , W. L. Lee , T. F. Teng , Y. H. Lai , W. H. Hung

DOI: 10.1021/JP904178A

关键词:

摘要: The adsorption and thermal decomposition of iodoalkanes CH3I, C2H5I, C4H9I on Ge(100) were studied with temperature-programmed desorption (TPD) X-ray photoelectron spectra (XPS) using synch...

参考文章(38)
Ruiming Zhang, Andrew J. Gellman, Straight-chain alcohol adsorption on the Ag(110) surface The Journal of Physical Chemistry. ,vol. 95, pp. 7433- 7437 ,(1991) , 10.1021/J100172A059
A. Dimoulas, G. Mavrou, G. Vellianitis, E. Evangelou, N. Boukos, M. Houssa, M. Caymax, HfO2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition Applied Physics Letters. ,vol. 86, pp. 032908- ,(2005) , 10.1063/1.1854195
G. W. Cullen, J. A. Amick, D. Gerlich, The Stabilization of Germanium Surfaces by Ethylation Journal of The Electrochemical Society. ,vol. 109, pp. 124- 127 ,(1962) , 10.1149/1.2425342
Dunwei Wang, Ying-Lan Chang, Zhuang Liu, Hongjie Dai, Oxidation Resistant Germanium Nanowires: Bulk Synthesis, Long Chain Alkanethiol Functionalization, and Langmuir−Blodgett Assembly Journal of the American Chemical Society. ,vol. 127, pp. 11871- 11875 ,(2005) , 10.1021/JA053836G
S. Spiga, C. Wiemer, G. Tallarida, G. Scarel, S. Ferrari, G. Seguini, M. Fanciulli, Effects of the oxygen precursor on the electrical and structural properties of HfO2 films grown by atomic layer deposition on Ge Applied Physics Letters. ,vol. 87, pp. 112904- ,(2005) , 10.1063/1.2042631
M.L. Colaianni, P.J. Chen, H. Gutleben, J.T. Yates, Vibrational studies of CH3I on Si(100)-(2×1): adsorption and decomposition of the methyl species Chemical Physics Letters. ,vol. 191, pp. 561- 568 ,(1992) , 10.1016/0009-2614(92)85589-3
Sariwan Tjandra, Francisco Zaera, Adsorption and thermal decomposition of propyl iodides on Ni(100) surfaces Langmuir. ,vol. 10, pp. 2640- 2646 ,(1994) , 10.1021/LA00020A024
J. Pollmann, Self-consistent electronic structure of semi-infinite Si(001) (2×1) and Ge(001) (2×1) with model calculations for scanning tunneling microscopy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 5, pp. 945- 952 ,(1987) , 10.1116/1.583695
Michael X. Yang, Sam K. Jo, Anumita Paul, Luis Avila, Brian E. Bent, Koichi Nishikida, CH3I and C2H5I on Au(100): adsorption and reaction Surface Science. ,vol. 325, pp. 102- 120 ,(1995) , 10.1016/0039-6028(94)00722-5
Hanne. Neergaard Waltenburg, John T. Yates, Surface Chemistry of Silicon. Chemical Reviews. ,vol. 95, pp. 1589- 1673 ,(1994) , 10.1021/CR00037A600