Recent developments in secondary electron imaging

摘要: SUMMARY Some recent experimental and theoretical developments in secondary electron (SE) imaging are reviewed. Coincidence experiments identify inner-shell excitations single valence often as more significant initial events SE production than the delocalized process of plasmon generation. Quantitative measurement interpretation escape depths different materials now becoming possible. Local variations surface barrier height or work function can be imaged, e.g. at p-n junctions semiconductors, especially if effects external patch fields overcome.