Growth of ZnTe films by ionized cluster beam epitaxy at low temperature
作者： Jia You Feng , Yi Zheng , Fang Wei Zhang , Yu Dian Fan
DOI: 10.1016/0040-6090(95)07084-2
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摘要: Abstract Lattice-mismatched ZnTe(100) epilayers and highly (111)-oriented ZnTe film were grown on GaAs(100), Si(100), glass substrates, respectively, by ionized cluster beam epitaxy at a growth rate of up to 1.2 nm s −1 . From the analysis X-ray diffraction reflection high-energy electron diffraction, layers shown be epitaxial films. It was found that crystalline quality depended substrate temperature. At low temperature 300 °C, optimum films GaAs, Si exhibit full width half maximum (FWHM) values rocking curves 110, 148 1417 arc sec, respectively.
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M. Lang, D. Schikora, T. Widmer, C. Giftge, A. Forstner, V. Holy, J. Humenberger, K. Lischka, G. Brunthaler, H. Sitter, M. von Ortenberg, Structural properties of perfect ZnTe epilayers on (001) GaAs substrates Journal of Crystal Growth. ,vol. 138, pp. 81- 85 ,(1994) , 10.1016/0022-0248(94)90784-6
Takafumi Yao, Toshihiko Takeda, Growth process in atomic layer epitaxy of Zn chalcogenide single crystalline films on (100)GaAs Applied Physics Letters. ,vol. 48, pp. 160- 162 ,(1986) , 10.1063/1.96930
W. Knauer, Formation of large metal clusters by surface nucleation Journal of Applied Physics. ,vol. 62, pp. 841- 851 ,(1987) , 10.1063/1.339688
Y Fan, J Han, L He, J Saraie, RL Gunshor, M Hagerott, H Jeon, AV Nurmikko, GC Hua, N Otsuka, None, Graded band gap ohmic contact to p‐ZnSe Applied Physics Letters. ,vol. 61, pp. 3160- 3162 ,(1992) , 10.1063/1.107945
J.Y. Feng, F.W. Zhang, Y. Zheng, Y.D. Fan, Formation of Te clusters in ionized cluster beam deposition technique Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 95, pp. 50- 54 ,(1995) , 10.1016/0168-583X(94)00338-6
Hadas Shtrikman, A. Raizman, M. Oron, D. Eger, ZnTe layers grown on GaAs substrates by low pressure MOCVD Journal of Crystal Growth. ,vol. 88, pp. 522- 526 ,(1988) , 10.1016/0022-0248(88)90150-9
K. Kumazaki, F. Iida, K. Ohno, K. Hatano, K. Imai, Lattice strain near interface of MBE-grown ZnTe on GaAs Journal of Crystal Growth. ,vol. 117, pp. 285- 289 ,(1992) , 10.1016/0022-0248(92)90761-7
I. W. Tao, M. Jurkovic, W. I. Wang, Doping of ZnTe by molecular beam epitaxy Applied Physics Letters. ,vol. 64, pp. 1848- 1849 ,(1994) , 10.1063/1.111775
H.P. Wagner, W. Kuhn, W. Gebhardt, Photoluminescence properties of MOVPE grown ZnTe layers on (100) GaAs and (100) GaSb Journal of Crystal Growth. ,vol. 101, pp. 199- 203 ,(1990) , 10.1016/0022-0248(90)90965-N
T. W. Kim, H. L. Park, J. Y. Lee, Interfacial stages of the ZnTe/GaAs strained heterostructures grown by temperature‐gradient vapor transport deposition at low temperature Applied Physics Letters. ,vol. 64, pp. 2526- 2528 ,(1994) , 10.1063/1.111562