Copper deposition by electron cyclotron resonance plasma
作者： W. M. Holber , J. S. Logan , H. J. Grabarz , J. T. C. Yeh , J. B. O. Caughman
DOI: 10.1116/1.578666
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摘要: An electron cyclotron resonance plasma reactor has been built in order to study the filling of high aspect‐ratio features on semiconductor devices with metal. The produces a copper which is nearly 100% ionized at substrate, without use any buffer or carrier gas. ion flux dependent both feed rate neutrals into region, and microwave power absorbed plasma. Solid having aspect ratios as 4.2 demonstrated, simple model derived explain fill characteristics.
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