Plasma processing apparatus which uses a uniquely shaped antenna to reduce the overall size of the apparatus with respect to the plasma chamber

摘要: A plasma processing apparatus comprises a chamber having gas inlet opening and outlet opening. first high-frequency energy source supplies accelerating to holder that supports semiconductor specimen within the produce electric field. Gas is introduced through accelerated by field toward specimen. An antenna structure connected second which exciting at frequency in range between 100 MHz 1 GHz higher than of energy. The has radially outwardly extending, circumferentially equally spaced apart elements length equal quarter wavelength so there phase difference 180 degrees adjacent ones elements. uniformly excited converted high-density plasma.