Microwave plasma etching apparatus

作者: Shigeru Nishimatsu , Keizo Suzuki , Sadayuki Okudaira , Ichiro Kanomata

DOI:

关键词: Gas-filled tubeOptoelectronicsAnalytical chemistryEtching (microfabrication)MicrowaveDielectric barrier dischargeMagnetic fieldChemistryStage (hydrology)Ion source

摘要: A microwave plasma etching apparatus comprises: a discharge tube into which gas is supplied and forms region; means for generating magnetic field in the bringing stage holding material. In present invention, sample exists region. On one hand, an area of passage draining particles to outside from region 5/16 or less For this purpose, example, diameter 3/4 more

参考文章(4)
Tsuyoshi Yasui, Masahiko Hirose, Masahiko Yotuyanagi, Surface processing apparatus utilizing microwave plasma ,(1980)
Keizo Suzuki, Ken Ninomiya, Shigeru Mishimatsu, Microwave plasma etching Vacuum. ,vol. 34, pp. 953- 957 ,(1981) , 10.1016/0042-207X(84)90177-5
Klaus Drews, Jens-Peter Krumme, Substrate holder for etching thin films ,(1975)
John H Cash, James A Cunningham, Rf sputtering method ,(1970)