Fourier transform infrared spectroscopy as a method of investigation of semiconductor plasma etching

摘要: Plasma etching is a complicated process in the way it involves many ion and neutral species that, depending on plasma conditions, give rise to difficulties controlling etch mechanism both from sputtering deposition perspective. To investigate understand dynamics of interactions at interface between solid, surface characterization techniques are necessary: here we suitability FTIR (Fourier Transform Infrared Spectroscopy) as nondestructive, real-time, method complementary standard such XPS (X-Ray Photoelectron SIMS (Secondary Ion Mass Spectroscopy). The work presented therefore focuses attention etched silicon dioxide substrates ultra low dielectric substrates, with purpose studying characterizing modification due reactions components products, particular presence chemical bonds fluorine carbon. The possibility non-destructive infrared detection sample condition would be great help could suitable for in-line semiconductor devices during manufacturing.