Tantalum nitride thin film resistors for integration into copper metallization based RF-CMOS and BiCMOS technology platforms

摘要: Metal thin film resistors have been integrated into a damascene-copper multilayer metallization system for mixed-signal BiCMOS technology platforms. The process can be adjusted to achieve with very low temperature coefficients, high linearity, noise, and improved matching as compared based on implanted silicon or polysilicon processing. In addition, improvement in terms of good RF performance was observed.