Diffusion kinetics of the carburization and silicidation of Ti3SiC2
作者： Tamer El-Raghy , Michel W. Barsoum
DOI: 10.1063/1.366707
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摘要: The ternary carbide Ti 3 SiC 2 possesses a unique set of properties that could render it a material of considerable technological impact. The motivation for this work was to enhance the hardness and oxidation resistance of Ti 3 SiC 2 by altering its surface chemistry. Reaction of Ti 3 SiC 2 with single crystal Si wafers in the 1200–1350° C temperature range resulted in the formation of a dense surface layer composed of a two phase mixture of TiSi 2 and SiC. This layer grows in two distinct morphologies; an outer layer with fine (1–5 μm) SiC …
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