Semiconductor devices and structures

作者: Gurtej S. Sandhu

DOI:

关键词:

摘要: A semiconductor device structure is disclosed. The includes a mesa extending above substrate. has channel region between first side and second of the mesa. gate on mesa, comprising insulator conductor graphene overlying insulator. may comprise in one or more monolayers. Also disclosed are method for fabricating structure; an array vertical transistor devices, including devices having disclosed; devices.

参考文章(178)
Soo Young Choi, Dong-Kil Yim, Jrjyan Jerry Chen, Yan Ye, Method of IGZO and ZNO TFT fabrication with PECVD SiO2 passivation ,(2012)
Clement Hsingjen Wann, Chih Chieh Yeh, Chih-Sheng Chang, Germanium FinFETs with Metal Gates and Stressors ,(2010)
Tobias Mono, Arnd Scholz, Lars Dreeskornfeld, Jessica Hartwich, Matthias Goldbach, Method of manufacturing integrated circuits including a fet with a gate spacer ,(2008)
Nicholas V. LiCausi, Vimal K. Kamineni, Michael Wedlake, Abner F. Bello, Jason R. Cantone, Wenhui Wang, Ruilong Xie, Methods of forming substantially self-aligned isolation regions on FinFET semiconductor devices and the resulting devices ,(2013)