Active regions with compatible dielectric layers
作者： Pushkar Ranade
DOI:
关键词: Dielectric layer 、 Crystal structure 、 Optoelectronics 、 Semiconductor materials 、 Electronic engineering 、 Dielectric 、 Semiconductor structure 、 Materials science 、 Oxide
摘要: A method to form a semiconductor structure with an active region and compatible dielectric layer is described. In one embodiment, has comprised of oxide first material, wherein second (and compositionally different) material formed between the material. another portion replaced third in order impart uniaxial strain lattice
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